2SC3673 Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage.
| Part number | 2SC3673 |
|---|---|
| Datasheet | 2SC3673_ToshibaSemiconductor.pdf |
| File Size | 144.34 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Transistor |
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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage.
| Part Number | Description |
|---|---|
| 2SC3670 | Silicon NPN Transistor |
| 2SC3671 | Silicon NPN Transistor |
| 2SC3672 | Silicon NPN Transistor |
| 2SC3605 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC3606 | Silicon NPN Transistor |
| 2SC3607 | Silicon NPN Transistor |
| 2SC3613 | NPN Transistor |
| 2SC3619 | NPN Transistor |
| 2SC3620 | Silicon NPN Transistor |
| 2SC3621 | NPN Transistor |