2SC3673
TOSHIBA Transistor Silicon NPN Epitaxial Type
Switching Applications Solenoid Drive Applications
Unit: mm
- High DC current gain : h FE = 500 (min) (IC = 400 m A)
- Low collector-emitter saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 300 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 40 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation
1000 m W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEITA TOSHIBA
― 2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.2 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the...
