2SC3671
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
- High DC current gain and excellent h FE linearity : h FE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : h FE = 70 (min) (VCE = 2 V, IC = 4 A)
- Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
- High collector power dissipation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Pulse (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IB PC Tj Tstg
50 40 20 8 5
0.5 1000 150
- 55 to 150
A m W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note...
