2SC3672
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
- High breakdown voltage: VCBO = 300 V, VCEO = 300 V
- Low saturation voltage: VCE (sat) = 0.5 V (max)
- Small collector output capacitance: Cob = 3 p F (typ.)
- plementary to 2SA1432.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
300 300
6 100 20 1000 150
- 55 to 150
V V V m A m A m W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to...
