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2SC3795B - NPN Transistor

Datasheet Summary

Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min.) Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching applications.

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Datasheet Details

Part number 2SC3795B
Manufacturer INCHANGE
File Size 210.21 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
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