Inchange Semiconductor 2SC3795B
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3795B |
|---|---|
| Datasheet | 2SC3795B Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min.)●Low Collector Saturation Voltage
●High Speed Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3795B● isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3795B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 VCE(sat) Collect...