Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
- Good Linearity of hFE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in humidifier , DC/DC converter and general purpose...
