Datasheet Details
| Part number | 2SC3835 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.95 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3835-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3835 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.95 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3835-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3835 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3835 | Silicon NPN Transistor | Sanken electric |
 |
2SC3835 | SWITCH NPN TRANSISTOR | UTC |
 |
2SC3835 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3830 | NPN Transistor |
| 2SC3831 | NPN Transistor |
| 2SC3832 | NPN Transistor |
| 2SC3833 | NPN Transistor |
| 2SC3834 | NPN Transistor |
| 2SC3821 | NPN Transistor |
| 2SC3822 | NPN Transistor |
| 2SC3842 | NPN Transistor |
| 2SC3843 | NPN Transistor |
| 2SC3850 | NPN Transistor |