Inchange Semiconductor 2SC3835
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3835 |
|---|---|
| Datasheet | 2SC3835 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in humidifier , DC/DC converter and general purpose applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3835 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation...