Datasheet Details
| Part number | 2SC3854 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.38 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3854-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3854 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.38 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3854-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·plement to Type 2SA1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3854 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3854 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3850 | NPN Transistor |
| 2SC3851 | NPN Transistor |
| 2SC3851A | NPN Transistor |
| 2SC3852 | NPN Transistor |
| 2SC3853 | NPN Transistor |
| 2SC3855 | NPN Transistor |
| 2SC3856 | NPN Transistor |
| 2SC3857 | NPN Transistor |
| 2SC3858 | NPN Transistor |
| 2SC3821 | NPN Transistor |