High Breakdown Voltage
High Switching Speed
Wide Area of Safe Operation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Ultrahigh definition CRT display horizontal deflection
output applications
ABS
Full PDF Text Transcription for 2SC3897 (Reference)
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3897 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tes...
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·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
2SC3897 Datasheet
