Adoption of MBIT process. Package Dimensions
unit:mm 2039D
[2SC3897]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc.
Full PDF Text Transcription for 2SC3897 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC3897. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High sp...
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T Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.
2SC3897 Datasheet
