Datasheet4U Logo Datasheet4U.com

2SC4026 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.5 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4026 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4026 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

2SC4026 Distributor & Price

Compare 2SC4026 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Panasonic Semiconductor Logo 2SC4026 Silicon NPN Transistor Panasonic Semiconductor
SavantIC Logo 2SC4026 SILICON POWER TRANSISTOR SavantIC

More Datasheets from Inchange Semiconductor

Part Number Description
2SC4020 NPN Transistor
2SC4024 NPN Transistor
2SC4029 NPN Transistor
2SC4004 NPN Transistor
2SC4008 NPN Transistor
2SC4051 NPN Transistor
2SC4053 NPN Transistor
2SC4055 NPN Transistor
2SC4073 NPN Transistor
2SC4075 NPN Transistor