Inchange Semiconductor 2SC4250
Silicon NPN RF Transistor
| Part No. | 2SC4250 |
|---|---|
| Datasheet | 2SC4250 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Conversion GainGce = 25 dB TYP.●Low Reverse Transfer CapacitanceCre = 0.45 pF TYP.
APPLICATIONS
●Designed for TV VHF mixer applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 25 mA PC 0.1 W TJ 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website： Free Datasheet INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4250 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 fT Current-Gain—Bandwidth Product IC= 5mA;VCE= 10V 900...
