Toshiba 2SC4250
Silicon NPN Transistor
- Max Operating Temp : 125°C
Source:
Octopart
APPLICATIONS
Unit: mm● High conversion gain: Gce = 25dB (typ.)
● Low reverse transfer capacitance: Cre = 0.45 pF (typ.)
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 20 3 50 25 100 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Conversion gain Noise figure Symbol Test Condition Min ICBO IEBO V (BR) CEO hFE Cre fT Gce NF VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 5 mA VCC = 12 V, f = 200 MHz, fL = 260 MHz (Figure 1) ¾ ¾ 20 40 ¾ 900 20 ¾ Typ.