Datasheet Details
| Part number | 2SC4426 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4426-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4426.
| Part number | 2SC4426 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4426-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 45 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4426 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4426 | NPN Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC4421 | Silicon NPN Power Transistor |
| 2SC4423 | NPN Transistor |
| 2SC4424 | NPN Transistor |
| 2SC4425 | NPN Transistor |
| 2SC4427 | NPN Transistor |
| 2SC4428 | NPN Transistor |
| 2SC4429 | NPN Transistor |
| 2SC4418 | NPN Transistor |
| 2SC4419 | NPN Transistor |
| 2SC4434 | NPN Transistor |