Datasheet Details
| Part number | 2SC4437 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.57 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4437-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4437.
| Part number | 2SC4437 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.57 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4437-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4437 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4437 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC4437 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4434 | NPN Transistor |
| 2SC4438 | NPN Transistor |
| 2SC4418 | NPN Transistor |
| 2SC4419 | NPN Transistor |
| 2SC4421 | Silicon NPN Power Transistor |
| 2SC4423 | NPN Transistor |
| 2SC4424 | NPN Transistor |
| 2SC4425 | NPN Transistor |
| 2SC4426 | NPN Transistor |
| 2SC4427 | NPN Transistor |