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2SC4437 Datasheet PDF

Sanyo Electric 2SC4437

NPN Triple Diffused Planar Silicon Transistor

Part No. 2SC4437
Datasheet 2SC4437 Download
Manufacturer
Sanyo Electric
Description NPN Triple Diffused Planar Silicon Transistor
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2SC4437 datasheet page 1 preview

APPLICATIONS

FEATURES

● High speed (tf=0.3ns max).
● High breakdown voltage (VCBO=1500V).
● High reliability (adoption of HVP process).
● Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4437] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICES ICBO VCEO(sus) IEBO VCE(sat) VBE(sat) VCE=1500V VCB=800V, IE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=4A, IB=1A IC=4A, IB=1A 2.8 2.0 1.0 123 5.45 5.45 3.5 20.4 2.0 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PM...
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