Datasheet4U Logo Datasheet4U.com

2SC4448 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chroma output applications for HDTV Video output applications for high

📥 Download Datasheet

Datasheet preview – 2SC4448

Datasheet Details

Part number 2SC4448
Manufacturer INCHANGE
File Size 177.54 KB
Description NPN Transistor
Datasheet download datasheet 2SC4448 Datasheet
Additional preview pages of the 2SC4448 datasheet.

📁 Similar Datasheet

  • 2SC4448 - NPN Transistor (Toshiba Semiconductor)
  • 2SC4448 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4440 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4441 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4442 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SC4443 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4445 - Silicon NPN Transistor (Sanken electric)
  • 2SC4445 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4446 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4446 - NPN Epitaxial Planar Silicon Transistor (Guangdong Kexin Industrial)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4448 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chroma output applications for HDTV ·Video output applications for high resolution display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 50 mA 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
Published: |