Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
- Good Linearity of hFE
- plement to Type 2SA1694
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose...
