Inchange Semiconductor 2SC4536
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4536 |
|---|---|
| Datasheet | 2SC4536 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz●Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in middle power , low distortion low noise figure RF amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.25 A 2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4536ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 5.0 μA IEBO Emitter Cutoff Current VEB= 2...
