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2SC4536 - NPN TRANSISTOR

General Description

The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier.

Key Features

  • excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). 4.5±0.1 1.6±0.2 1.5±0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). 4.5±0.1 1.6±0.2 1.5±0.1 PACKAGE DIMENSIONS (Unit: mm) • Low Distortion IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. • Low Noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 1 GHz High Power Dissipation. • Power Mini Mold Package Used. @ VCE = 10 V, IC = 50 mA 0.8 MIN. 0.42 ±0.06 E 1.5 C B 0.42±0.06 0.47 ±0.06 3.0 0.41 +0.05 −0.