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2SC4544 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Small Collector Ouptut Capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching and amplifier applications.

Color TV horizontal driver applica

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Small Collector Ouptut Capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.