Inchange Semiconductor 2SC4549
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4549 |
|---|---|
| Datasheet | 2SC4549 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)●High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1A)
●Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 3A, IB= 0.15A)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as a driver in DC/DC converters and actuators.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PT TJ Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 7.0 V Collector Current-Continuous 5.0 A Collector Current-Pulse 10 A Base Current-Continuous 2.5 A Total Power Dissipation @TC=25℃ 25 W Total Power Dissipation @Ta=25℃ 2.0 Junction Temperature 150 ℃ Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SC4549 isc Website： 1 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4549ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
