Inchange Semiconductor 2SC4552
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4552 |
|---|---|
| Datasheet | 2SC4552 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)●High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A)
●Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as a driver in DC/DC converters and actuators.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 V 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC4552 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4552ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vol...