Datasheet Details
| Part number | 2SC4552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4552-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4552 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4552-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 V 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC4552 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4552 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA, Ib=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC4552 | NPN Transistor | NEC |
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2SC4552 | SILICON POWER TRANSISTOR | SavantIC |
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2SC4552 | SILICON POWER TRANSISTOR | Renesas |
| Part Number | Description |
|---|---|
| 2SC4550 | NPN Transistor |
| 2SC4557 | NPN Transistor |
| 2SC4559 | NPN Transistor |
| 2SC4507 | NPN Transistor |
| 2SC4508 | NPN Transistor |
| 2SC4509 | NPN Transistor |
| 2SC4510 | NPN Transistor |
| 2SC4511 | NPN Transistor |
| 2SC4512 | NPN Transistor |
| 2SC4517 | NPN Transistor |