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2SC4552 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 V 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.