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2SC4765 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1700V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for med

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Datasheet Details

Part number 2SC4765
Manufacturer INCHANGE
File Size 187.84 KB
Description NPN Transistor
Datasheet download datasheet 2SC4765 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4765 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ±5 A ICP Collector Current-Pulse ±10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.
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