Datasheet Details
| Part number | 2SC4901YK |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.43 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4901YK-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4901YK.
| Part number | 2SC4901YK |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.43 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4901YK-INCHANGE.pdf |
|
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·High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz ·High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·UHF / VHF wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4901YK ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Breakdown Voltage IC= 1uA ;
IE= 0 ICBO Collector Cutoff Current VCB= 10V ;
IE= 0 IEBO Emitter Cutoff Current VEB= 1V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4901 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SC4901 | Silicon NPN Transistor | Inchange Semiconductor |
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2SC4901 | Silicon NPN Transistor | Renesas |
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