Datasheet Summary
isc Silicon NPN RF Transistor
DESCRIPTION
- High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz
- High gain, low noise figure
︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- UHF / VHF wide band...
