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2SC4901 - Silicon NPN Transistor

General Description

High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

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isc Silicon NPN RF Transistor DESCRIPTION · High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz · High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·UHF / VHF wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4901 isc website：www.iscsemi.