Datasheet Details
| Part number | 2SC4960 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4960-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960.
| Part number | 2SC4960 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4960-INCHANGE.pdf |
|
|
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.3 A 40 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4960 | NPN Transistor | Panasonic Semiconductor |
|
2SC4960A | NPN TRANSISTOR | Panasonic Semiconductor |
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