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2SC4960A - NPN TRANSISTOR

Key Features

  • q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 900 900 800 900 7 2 1 0.3 40 3 150.
  • 55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage 2SC4960 2SC4960A VCBO VCES VCEO VEBO I.

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Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 900 900 800 900 7 2 1 0.3 40 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage 2SC4960 2SC4960A VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol 16.2±0.5 12.5 3.5 Solder Dip 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.