Datasheet Details
| Part number | 2SC5516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5516-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5516.
| Part number | 2SC5516 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5516-INCHANGE.pdf |
|
|
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·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 20 A ICM Collector Current- Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5516 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5516 | NPN TRANSISTOR | Panasonic Semiconductor |
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