Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Breakdown Voltage-
：VCBO= 1700V (Min)
- High Switching Speed
- Wide Area of Safe Operation
- Built-in Damper Diode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal deflection output...
