Datasheet Details
| Part number | 2SC5548 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5548-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5548.
| Part number | 2SC5548 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5548-INCHANGE.pdf |
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·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SB1204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 1 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5548 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=1mA;
IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=10mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5548 | NPN TRANSISTOR | Toshiba Semiconductor |
|
2SC5548A | NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SC5548A | NPN Transistor |
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| 2SC5002 | NPN Transistor |
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| 2SC5042 | NPN Transistor |
| 2SC5043 | NPN Transistor |