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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC5548
Unit: mm
• High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
600 370
7 2 4 0.5 1.0 15 150 −55 to 150
V V V
A
A
W
°C °C
Note: Using continuously under heavy loads (e.g.
2SC5548 Datasheet
