2SC5802
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- Wide Area of Safe Operation
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current- Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor
INCHANGE...
