Datasheet Details
| Part number | 2SC5802 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5802-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5802.
| Part number | 2SC5802 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5802-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5802 | Silicon NPN Power Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SC5855 | NPN Transistor |
| 2SC5886A | NPN Transistor |
| 2SC5887 | NPN Transistor |
| 2SC5895 | NPN Transistor |
| 2SC5002 | NPN Transistor |
| 2SC5006 | NPN Transistor |
| 2SC5042 | NPN Transistor |
| 2SC5043 | NPN Transistor |
| 2SC5065 | NPN Transistor |
| 2SC5071 | NPN Transistor |