High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
Wide Area of Safe Operation
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage color display horizontal
deflect
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5803
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current- Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
24
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC5803 Datasheet
