Inchange Semiconductor 2SC5890
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5890 |
|---|---|
| Datasheet | 2SC5890 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Gain Bandwidth Product fT = 7.8 GHz TYP.●High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in UHF ~ VHF wide band amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 75 mA 0.7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5890ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidt...