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2SC5890 Datasheet PDF

Renesas Electronics 2SC5890

Silicon NPN Transistor

Part No. 2SC5890
Datasheet 2SC5890 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Transistor
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2SC5890 datasheet page 1 preview

FEATURES

● High gain bandwidth product: fT = 7.8 GHz typ.
● High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz
● High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm)
● High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition. Outline MPAK ADE-208-1533 (Z) 1st. Edition Aug.2002 Note: Marking is “FS-”. 3 1 2 1. Emitter 2. Base 3. Collector 2SC5890

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation V CBO V CEO VEBO IC Pc Junction temperature Tj Storage temperature Tstg *When using alumina ceramic board (25 x 60 x 0.7 mm) Ratings 20 12 1.5 75 700* 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cuto...
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