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2SC940 - NPN Transistor

General Description

High Breakdown Voltage- : VCEO= 90V(Min) Wide Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

Suitable for horizontal output applications in 12

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCEO= 90V(Min) ·Wide Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ·Suitable for horizontal output applications in 12~24 inch B/W TV, and switching applications of 5A class. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCES Collector-Emitter Voltage 200 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 7.