Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V(Max) @IC= 4.0A
- plement to Type 2SB825
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general high current switching as solenoid driving, high speed inverter and converter...
