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2SD1061 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low saturation voltage : VCE(sat)=(.
  • )0.4V max.
  • Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Par.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low saturation voltage : VCE(sat)=(–)0.4V max.