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Inchange Semiconductor
2SD1223
DESCRIPTION - High DC Current Gain- : h FE = 2000(Min)@ IC= 4A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 15 W ℃ Tstg Storage Temperature...