Datasheet Details
| Part number | 2SD1223 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.73 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1223-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1223 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.73 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1223-INCHANGE.pdf |
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·High DC Current Gain- : hFE = 2000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 0.4 A 15 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 8.33 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1223 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A ,IB= 6mA ICBO Collector Cutoff Current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
IC= 0 hFE-1 DC Current Gain IC= 1A;
VCE= 2V hFE-2 DC Current Gain IC= 3.0A;
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| Brand Logo | Part Number | Description | Manufacturer |
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