Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 2000(Min.)@ IC= 5A, VCE= 2V
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.)
- plement to Type 2SB912
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control...
