High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) Complement to Type 2SB912 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| D1229 | SANYO | 2SD1229 |
| 2SD1221 | Toshiba | Silicon NPN Transistor |
| 2SD1222 | Toshiba | NPN TRANSISTOR |
| 2SD1226M | ROHM | Epitaxial Planar NPN Silicon Transistors |
| 2SD1225M | ROHM | NPN Transistor |
| D1228M | ROHM | 2SD1228M |
| D1220 | Toshiba | 2SD1220 |
| 2SD1220 | Kexin Semiconductor | Silicon NPN Epitaxial Transistor |
| D1224 | Toshiba | 2SD1224 |
