Datasheet Details
| Part number | 2SD1229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1229-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1229.
| Part number | 2SD1229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1229-INCHANGE.pdf |
|
|
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·High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·Complement to Type 2SB912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 2.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1229 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1229 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1223 | NPN Transistor |
| 2SD1202 | NPN Transistor |
| 2SD1204 | NPN Transistor |
| 2SD1210 | NPN Transistor |
| 2SD1212 | NPN Transistor |
| 2SD1213 | NPN Transistor |
| 2SD1230 | Silicon NPN Darlington Power Transistor |
| 2SD1235 | NPN Transistor |
| 2SD1236 | NPN Transistor |
| 2SD1236L | NPN Transistor |