2SD1221
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
Audio Frequency Power Amplifier Application
Unit: mm
- Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
- High power dissipation: PC = 20 W (Tc = 25°C)
- plementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 3 A
Base current
IB 0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
1.0 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...
