| Part number | 2SD1222 |
|---|---|
| Datasheet | 2SD1222_ToshibaSemiconductor.pdf |
| File Size | 214.67 KB |
| Manufacturer | Toshiba |
| Description | NPN TRANSISTOR |
|
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2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) plementary to 2SB907.
| Part Number | Description |
|---|---|
| 2SD1220 | Silicon NPN Transistor |
| 2SD1221 | Silicon NPN Transistor |
| 2SD1223 | NPN TRANSISTOR |
| 2SD1224 | Silicon NPN Transistor |
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| 2SD1092 | NPN TRANSISTOR |
| 2SD1140 | NPN TRANSISTOR |
| 2SD1160 | NPN TRANSISTOR |
| 2SD1187 | NPN TRANSISTOR |
