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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1220
2SD1220
Power Amplifier Applications
Unit: mm
• Complementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
150 V 150 V
6V 1.5 A 1.0 A 1.0
W 10
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
2SD1220 Datasheet
