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2SD1223
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1223
Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
• • • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 4 0.4 1.0 15 150 −55 to 150 Unit V V V A A
JEDEC
W °C °C
― ― 2-7J1A
JEITA TOSHIBA
Weight: 0.36 g (typ.
2SD1223 Datasheet
