Datasheet4U Logo Datasheet4U.com

D1221 - 2SD1221

📥 Download Datasheet

Datasheet preview – D1221

Datasheet Details

Part number D1221
Manufacturer Toshiba
File Size 150.82 KB
Description 2SD1221
Datasheet download datasheet D1221 Datasheet
Additional preview pages of the D1221 datasheet.

📁 Similar Datasheet

  • D1221UK - METAL GATE RF SILICON FET (Seme LAB)
  • D1222UK - METAL GATE RF SILICON FET (Seme LAB)
  • D1223 - 2SD1223 (Toshiba Semiconductor)
  • D122424S-1W - DC/DC CONVERTER (REICU)
  • D122424S-2W - DC/DC CONVERTER (REICU)
  • D1228M - 2SD1228M (Rohm)
  • D1229 - 2SD1229 (Sanyo)
  • D1200 - NPN Silicon Transistor (ROHM)
  • D12000W - Standard Recovery Diode (nELL)
  • D1201 - Rectifiers (RCA)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-7J1A Note: Using continuously under heavy loads (e.g.
Published: |