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2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
30 30 10 1.5 0.15 1.0 10 150 −55 to 150
Unit V V V A A
W
°C °C
Equivalent Circuit
BASE
COLLECTOR
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.
D1224 Datasheet
