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2SD1220 - Silicon NPN Epitaxial Transistor

Key Features

  • Power Amplifier.

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Full PDF Text Transcription for 2SD1220 (Reference)

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SMD Type Transistors Silicon NPN Epitaxial Transistor 2SD1220 Features Power Amplifier Applications + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.5...

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+ 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 max 3.80 + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature range Symbol Rating Unit VCBO 150 V VCEO 150 V VEBO 6 V IC 1.