Datasheet Details
| Part number | 2SD1277 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1277-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1277 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1277-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 45 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1277 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1277 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SD1277 | Silicon NPN Transistor | Panasonic Semiconductor | |
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2SD1277 | SILICON POWER TRANSISTOR | SavantIC |
| 2SD1277A | Silicon PNP Transistor | Panasonic Semiconductor | |
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2SD1277A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SD1270 | NPN Transistor |
| 2SD1271 | NPN Transistor |
| 2SD1271A | NPN Transistor |
| 2SD1274 | NPN Transistor |
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| 2SD1278 | NPN Transistor |
| 2SD1279 | NPN Transistor |
| 2SD1202 | NPN Transistor |
| 2SD1204 | NPN Transistor |
| 2SD1210 | NPN Transistor |