2SD1277 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1277 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.