Datasheet Details
| Part number | 2SD1278 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.48 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1278-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1278.
| Part number | 2SD1278 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.48 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1278-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1278 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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