2SD1296 Overview
hFE= 1000(Min.)@ IC= 15A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power...

