NEC 2SD1296
Darlington Power Transistors
| Part No. | 2SD1296 |
|---|---|
| Datasheet | 2SD1296 Download |
| Manufacturer |  NEC |
| Description | Darlington Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
¡¤ With TO-3PN package ¡¤ High DC current gain ¡¤ Low saturation voltageAPPLICATIONS
¡¤ For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbolDESCRIPTION
Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 TC=25¡æ 100 W Ta=25¡æ 3.0 150 -55~150 ¡æ ¡æ UNIT V V V A A PT Total power dissipation Tj Tstg Junction temperature Storage temperature JMnic 4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V 1000 MIN 100 TYP.
