Datasheet Details
| Part number | 2SD1296 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 119.40 KB |
| Description | Darlington Power Transistors |
| Datasheet | 2SD1296_NEC.pdf |
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Overview: www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors.
| Part number | 2SD1296 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 119.40 KB |
| Description | Darlington Power Transistors |
| Datasheet | 2SD1296_NEC.pdf |
|
|
|
¡¤ With TO-3PN package ¡¤ High DC current gain ¡¤ Low saturation voltage APPLICATIONS ¡¤ For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak www.DataSheet4U.com CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 TC=25¡æ 100 W Ta=25¡æ 3.0 150 -55~150 ¡æ ¡æ UNIT V V V A A PT Total power dissipation Tj Tstg Junction temperature Storage temperature JMnic www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V;
IE=0 VEB=5V;
IC=0 IC=15A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1296 | NPN Transistor | INCHANGE |
 |
2SD1296 | SILICON POWER TRANSISTOR | SavantIC |
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